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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD716 DESCRIPTION With TO-3P(I) package Complement to type 2SB686 APPLICATIONS Power amplifier applications Recommend for 30~35W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IE PT Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 100 100 5 Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Open collector Collector current Emitter current Total power dissipation Junction temperature Storage temperature TC=25ae 6 -6 60 150 -55~150 UNIT V V V A A W ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=50mA ,IB=0 IE=10mA ,IC=0 IC=4A; IB=0.4A IC=4A ; VCE=5V VCB=100V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=1A ; VCE=5V 55 12 MIN 100 5 TYP. 2SD716 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE fT Cob MAX UNIT V V 2.0 1.5 10 10 160 |I |I V V A A hFE Classifications R 55-110 O TOR NDU ICO E SEM ANG INCH Output capacitance IE=0 ; VCB=10V ;f=1MHz 100 MHz pF 80-160 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD716 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions(unindicated tolerance:A 0.10 mm) 3 |
Price & Availability of 2SD716 |
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